N-Channel Power MOSFET
70V, 80A, 6.8mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
RDs(ON) and fast switching speed.
Features
● Max RDS(on) = 6.8mΩ at VGS=10V,ID =40A
● High performance trench technology for extremely low RDS(on)
● High power and current handling capability
Applications
● DC/DC converters
● DC-DC Synchronous rectification
● Power Managemement for Inverter Systems
